Перегляд за автором "Oksanich, A.P."

Сортувати за: Порядок: Результатів:

  • Influence of gas adsorption on the impedance of porous GaAs 
    Milovanov, Y.S.; Gavrilchenko, I.V.; Kondratenko, S.V.; Oksanich, A.P.; Pritchin, S.E.; Kogdas, M.G. (Functional Materials, 2017)
    Porous GaAs was formed electrochemically on n-type GaAs in a HF:C₂H₅OH (1:3) electrolyte. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). The hodographs of the total impedance ...
  • Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes 
    Oksanich, A.P.; Pritchin, S.E.; Vasheruk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in ...